Gender differences in Dutch research funding over time: A statistical investigation of the innovation scheme 2012-2021.

BACKGROUND: In 2015, the Dutch research council, NWO, took measures to combat gender bias disadvantaging female applicants in a popular three-tiered funding scheme called the Talent Programme. The innovation scheme consists of three grants for different career stages, called Veni, Vidi and Vici. OBJECTIVES: This paper studies the question whether or not NWO has been successful in removing gender differences in their funding procedure. METHODS: Using all available data from 2012 onwards of grant applications in the Talent Programme (16,249 applications of which 2,449 received funding), we study whether these measures had an effect using binomial generalized linear models. RESULTS: We find strong statistical evidence of a shift in gender effects in favour of female applicants in the first tier, the Veni (p < .001). Significant gender differences are not found in the two other tiers, the Vidi and Vici schemes. CONCLUSIONS: In recent years, female applicants are more likely to be awarded with a Veni grant than male applicants and this gender gap has increased over time. This suggests that gender differences still exist in the assessment of Talent Programme submissions, albeit in a different direction than a decade ago.

Sharp zero-phonon lines of single organic molecules on a hexagonal boron-nitride surface.

Single fluorescent molecules embedded in the bulk of host crystals have proven to be sensitive probes of the dynamics in their nano environment, thanks to their narrow (about 30-50 MHz or 0.1-0.2 µeV) optical linewidth of the 0-0 zero-phonon line (0-0 ZPL) at cryogenic temperatures. However, the optical linewidths of the 0-0 ZPL have been found to increase dramatically as the single molecules are located closer to a surface or interface, while no 0-0 ZPL has been detected for single molecules on any surface. Here we study single terrylene molecules adsorbed on the surface of hexagonal boron-nitride (hBN) substrates. Our low-temperature results show that it is possible to observe the 0-0 ZPL of fluorescent molecules on a surface. We compare our results for molecules deposited on the surfaces of annealed and non-annealed hBN flakes and we see a marked improvement in the spectral stability of the emitters after annealing.

Photoemission electron microscopy for connectomics.

Detailing the physical basis of neural circuits with large-volume serial electron microscopy (EM), 'connectomics', has emerged as an invaluable tool in the neuroscience armamentarium. However, imaging synaptic resolution connectomes is currently limited to either transmission electron microscopy (TEM) or scanning electron microscopy (SEM). Here, we describe a third way, using photoemission electron microscopy (PEEM) which illuminates ultra-thin brain slices collected on solid substrates with UV light and images the photoelectron emission pattern with a wide-field electron microscope. PEEM works with existing sample preparations for EM and routinely provides sufficient resolution and contrast to reveal myelinated axons, somata, dendrites, and sub-cellular organelles. Under optimized conditions, PEEM provides synaptic resolution; and simulation and experiments show that PEEM can be transformatively fast, at Gigahertz pixel rates. We conclude that PEEM imaging leverages attractive aspects of SEM and TEM, namely reliable sample collection on robust substrates combined with fast wide-field imaging, and could enable faster data acquisition for next-generation connectomics.

Low energy electron microscopy at cryogenic temperatures.

We describe a cryogenic sample chamber for low energy electron microscopy (LEEM), and present first experimental results. Modifications to our IBM/SPECS aberration-corrected LEEM instrument are presented first. These include incorporation of mechanisms for cooling the sample and its surroundings, and reduction of various sources of heat load. Using both liquid nitrogen and liquid helium, we have reached sample temperatures down to about 15 K. We also present first results for low-temperature LEEM, obtained on a three-monolayer pentacene film. Specifically, we observe a reduction of the electron beam irradiation damage cross-section at 15 eV by more than a factor of five upon cooling from 300 K down to 52 K. We also observe changes in the LEEM-IV spectra of the sample upon cooling, and discuss possible causes.

Extracting transverse electron mean free paths in graphene at low energy.

The LEEM-IV spectra of few-layer graphene show characteristic minima at specific energies, which depend on the number of graphene layers. For the same samples, low-energy TEM (eV-TEM) spectra exhibit transmission maxima at energies corresponding to those of the reflection minima in LEEM. Both features can be understood from interferences of the electron wave function in a purely elastic model. Inelastic scattering processes in turn lead to a finite, energy-dependent inelastic Mean Free Path (MFP) and a lower finesse of the interference features. Here we develop a model that introduces both an elastic and inelastic scattering parameter on the wave-function level, thus reconciling the models considered previously. Fitting to published data, we extract the elastic and inelastic MFP self-consistently and compare these to recent reports.

Imaging moiré deformation and dynamics in twisted bilayer graphene.

In 'magic angle' twisted bilayer graphene (TBG) a flat band forms, yielding correlated insulator behavior and superconductivity. In general, the moiré structure in TBG varies spatially, influencing the overall conductance properties of devices. Hence, to understand the wide variety of phase diagrams observed, a detailed understanding of local variations is needed. Here, we study spatial and temporal variations of the moiré pattern in TBG using aberration-corrected Low Energy Electron Microscopy (AC-LEEM). We find a smaller spatial variation than reported previously. Furthermore, we observe thermal fluctuations corresponding to collective atomic displacements over 70 pm on a timescale of seconds. Remarkably, no untwisting is found up to 600 ∘C. We conclude that thermal annealing can be used to decrease local disorder. Finally, we observe edge dislocations in the underlying atomic lattice, the moiré structure acting as a magnifying glass. These topological defects are anticipated to exhibit unique local electronic properties.

Complementary LEEM and eV-TEM for imaging and spectroscopy.

Transmission electron microscopy at very low energy is a promising way to avoid damaging delicate biological samples with the incident electrons, a known problem in conventional transmission electron microscopy. For imaging in the 0-30 eV range, we added a second electron source to a low energy electron microscopy (LEEM) setup, enabling imaging and spectroscopy in both transmission and reflection mode at nanometer (nm) resolution. The latter is experimentally demonstrated for free-standing graphene. Exemplary eV-TEM micrographs of gold nanoparticles suspended on graphene and of DNA origami rectangles on graphene oxide further establish the capabilities of the technique. The long and short axes of the DNA origami rectangles are discernable even after an hour of illumination with low energy electrons. In combination with recent developments in 2D membranes, allowing for versatile sample preparation, eV-TEM is paving the way to damage-free imaging of biological samples at nm resolution.

Key Role of Very Low Energy Electrons in Tin-Based Molecular Resists for Extreme Ultraviolet Nanolithography.

Extreme ultraviolet (EUV) lithography (13.5 nm) is the newest technology that allows high-throughput fabrication of electronic circuitry in the sub-20 nm scale. It is commonly assumed that low-energy electrons (LEEs) generated in the resist materials by EUV photons are mostly responsible for the solubility switch that leads to nanopattern formation. Yet, reliable quantitative information on this electron-induced process is scarce. In this work, we combine LEE microscopy (LEEM), electron energy loss spectroscopy (EELS), and atomic force microscopy (AFM) to study changes induced by electrons in the 0-40 eV range in thin films of a state-of-the-art molecular organometallic EUV resist known as tin-oxo cage. LEEM-EELS uniquely allows to correct for surface charging and thus to accurately determine the electron landing energy. AFM postexposure analyses revealed that irradiation of the resist with LEEs leads to the densification of the resist layer because of carbon loss. Remarkably, electrons with energies as low as 1.2 eV can induce chemical reactions in the Sn-based resist. Electrons with higher energies are expected to cause electronic excitation or ionization, opening up more pathways to enhanced conversion. However, we do not observe a substantial increase of chemical conversion (densification) with the electron energy increase in the 2-40 eV range. Based on the dose-dependent thickness profiles, a simplified reaction model is proposed where the resist undergoes sequential chemical reactions, first yielding a sparsely cross-linked network and then a more densely cross-linked network. This model allows us to estimate a maximum reaction volume on the initial material of 0.15 nm3 per incident electron in the energy range studied, which means that about 10 LEEs per molecule on average are needed to turn the material insoluble and thus render a pattern. Our observations are consistent with the observed EUV sensitivity of tin-oxo cages.

Quantifying work function differences using low-energy electron microscopy: The case of mixed-terminated strontium titanate.

For many applications, it is important to measure the local work function of a surface with high lateral resolution. Low-energy electron microscopy is regularly employed to this end since it is, in principle, very well suited as it combines high-resolution imaging with high sensitivity to local electrostatic potentials. For surfaces with areas of different work function, however, lateral electrostatic fields inevitably associated with work function discontinuities deflect the low-energy electrons and thereby cause artifacts near these discontinuities. We use ray-tracing simulations to show that these artifacts extend over hundreds of nanometers and cause an overestimation of the true work function difference near the discontinuity by a factor of 1.6 if the standard image analysis methods are used. We demonstrate on a mixed-terminated strontium titanate surface that comparing LEEM data with detailed ray-tracing simulations leads to much a more robust estimate of the work function difference.

Humidity-controlled rectification switching in ruthenium-complex molecular junctions.

Although molecular rectifiers were proposed over four decades ago 1,2 , until recently reported rectification ratios (RR) were rather moderate 2-11 (RR ~ 101). This ceiling was convincingly broken using a eutectic GaIn top contact 12 to probe molecular monolayers of coupled ferrocene groups (RR ~ 105), as well as using scanning tunnelling microscopy-break junctions 13-16 and mechanically controlled break junctions 17 to probe single molecules (RR ~ 102-103). Here, we demonstrate a device based on a molecular monolayer in which the RR can be switched by more than three orders of magnitude (between RR ~ 100 and RR ≥ 103) in response to humidity. As the relative humidity is toggled between 5% and 60%, the current-voltage (I-V) characteristics of a monolayer of di-nuclear Ru-complex molecules reversibly change from symmetric to strongly asymmetric (diode-like). Key to this behaviour is the presence of two localized molecular orbitals in series, which are nearly degenerate in dry circumstances but become misaligned under high humidity conditions, due to the displacement of counter ions (PF6-). This asymmetric gating of the two relevant localized molecular orbital levels results in humidity-controlled diode-like behaviour.

Reprint of Low-energy electron potentiometry.

In a lot of systems, charge transport is governed by local features rather than being a global property as suggested by extracting a single resistance value. Consequently, techniques that resolve local structure in the electronic potential are crucial for a detailed understanding of electronic transport in realistic devices. Recently, we have introduced a new potentiometry method based on low-energy electron microscopy (LEEM) that utilizes characteristic features in the reflectivity spectra of layered materials [1]. Performing potentiometry experiments in LEEM has the advantage of being fast, offering a large field of view and the option to zoom in and out easily, and of being non-invasive compared to scanning-probe methods. However, not all materials show clear features in their reflectivity spectra. Here we, therefore, focus on a different version of low-energy electron potentiometry (LEEP) that uses the mirror mode transition, i.e. the drop in electron reflectivity around zero electron landing energy when they start to interact with the sample rather than being reflected in front of it. This transition is universal and sensitive to the local electrostatic surface potential (either workfunction or applied potential). It can consequently be used to perform LEEP experiments on a broader range of material compared to the method described in Ref[1]. We provide a detailed description of the experimental setup and demonstrate LEEP on workfunction-related intrinsic potential variations on the Si(111) surface and for a metal-semiconductor-metal junction with external bias applied. In the latter, we visualize the Schottky effect at the metal-semiconductor interface. Finally, we compare how robust the two LEEP techniques discussed above are against image distortions due to sample inhomogeneities or contamination.

Low-energy electron potentiometry.

In a lot of systems, charge transport is governed by local features rather than being a global property as suggested by extracting a single resistance value. Consequently, techniques that resolve local structure in the electronic potential are crucial for a detailed understanding of electronic transport in realistic devices. Recently, we have introduced a new potentiometry method based on low-energy electron microscopy (LEEM) that utilizes characteristic features in the reflectivity spectra of layered materials [1]. Performing potentiometry experiments in LEEM has the advantage of being fast, offering a large field of view and the option to zoom in and out easily, and of being non-invasive compared to scanning-probe methods. However, not all materials show clear features in their reflectivity spectra. Here we, therefore, focus on a different version of low-energy electron potentiometry (LEEP) that uses the mirror mode transition, i.e. the drop in electron reflectivity around zero electron landing energy when they start to interact with the sample rather than being reflected in front of it. This transition is universal and sensitive to the local electrostatic surface potential (either workfunction or applied potential). It can consequently be used to perform LEEP experiments on a broader range of material compared to the method described in Ref[1]. We provide a detailed description of the experimental setup and demonstrate LEEP on workfunction-related intrinsic potential variations on the Si(111) surface and for a metal-semiconductor-metal junction with external bias applied. In the latter, we visualize the Schottky effect at the metal-semiconductor interface. Finally, we compare how robust the two LEEP techniques discussed above are against image distortions due to sample inhomogeneities or contamination.

Quantifying electronic band interactions in van der Waals materials using angle-resolved reflected-electron spectroscopy.

High electron mobility is one of graphene's key properties, exploited for applications and fundamental research alike. Highest mobility values are found in heterostructures of graphene and hexagonal boron nitride, which consequently are widely used. However, surprisingly little is known about the interaction between the electronic states of these layered systems. Rather pragmatically, it is assumed that these do not couple significantly. Here we study the unoccupied band structure of graphite, boron nitride and their heterostructures using angle-resolved reflected-electron spectroscopy. We demonstrate that graphene and boron nitride bands do not interact over a wide energy range, despite their very similar dispersions. The method we use can be generally applied to study interactions in van der Waals systems, that is, artificial stacks of layered materials. With this we can quantitatively understand the 'chemistry of layers' by which novel materials are created via electronic coupling between the layers they are composed of.

Nanoscale measurements of unoccupied band dispersion in few-layer graphene.

The properties of any material are fundamentally determined by its electronic band structure. Each band represents a series of allowed states inside a material, relating electron energy and momentum. The occupied bands, that is, the filled electron states below the Fermi level, can be routinely measured. However, it is remarkably difficult to characterize the empty part of the band structure experimentally. Here, we present direct measurements of unoccupied bands of monolayer, bilayer and trilayer graphene. To obtain these, we introduce a technique based on low-energy electron microscopy. It relies on the dependence of the electron reflectivity on incidence angle and energy and has a spatial resolution ∼10 nm. The method can be easily applied to other nanomaterials such as van der Waals structures that are available in small crystals only.

eV-TEM: Transmission electron microscopy in a low energy cathode lens instrument.

We are developing a transmission electron microscope that operates at extremely low electron energies, 0-40 eV. We call this technique eV-TEM. Its feasibility is based on the fact that at very low electron energies the number of energy loss pathways decreases. Hence, the electron inelastic mean free path increases dramatically. eV-TEM will enable us to study elastic and inelastic interactions of electrons with thin samples. With the recent development of aberration correction in cathode lens instruments, a spatial resolution of a few nm appears within range, even for these very low electron energies. Such resolution will be highly relevant to study biological samples such as proteins and cell membranes. The low electron energies minimize adverse effects due to radiation damage.

Spin transition in arrays of gold nanoparticles and spin crossover molecules.

We investigate if the functionality of spin crossover molecules is preserved when they are assembled into an interfacial device structure. Specifically, we prepare and investigate gold nanoparticle arrays, into which room-temperature spin crossover molecules are introduced, more precisely, [Fe(AcS-BPP)2](ClO4)2, where AcS-BPP = (S)-(4-{[2,6-(dipyrazol-1-yl)pyrid-4-yl]ethynyl}phenyl)ethanethioate (in short, Fe(S-BPP)2). We combine three complementary experiments to characterize the molecule-nanoparticle structure in detail. Temperature-dependent Raman measurements provide direct evidence for a (partial) spin transition in the Fe(S-BPP)2-based arrays. This transition is qualitatively confirmed by magnetization measurements. Finally, charge transport measurements on the Fe(S-BPP)2-gold nanoparticle devices reveal a minimum in device resistance versus temperature, R(T), curves around 260-290 K. This is in contrast to similar networks containing passive molecules only that show monotonically decreasing R(T) characteristics. Backed by density functional theory calculations on single molecular conductance values for both spin states, we propose to relate the resistance minimum in R(T) to a spin transition under the hypothesis that (1) the molecular resistance of the high spin state is larger than that of the low spin state and (2) transport in the array is governed by a percolation model.

Correction: Ordered nanoparticle arrays interconnected by molecular linkers: electronic and optoelectronic properties.

Correction for 'Ordered nanoparticle arrays interconnected by molecular linkers: electronic and optoelectronic properties' by Jianhui Liao et al., Chem. Soc. Rev., 2015, DOI: .

Ordered nanoparticle arrays interconnected by molecular linkers: electronic and optoelectronic properties.

Arrays of metal nanoparticles in an organic matrix have attracted a lot of interest due to their diverse electronic and optoelectronic properties. Recent work demonstrates that nanoparticle arrays can be utilized as a template structure to incorporate single molecules. In this arrangement, the nanoparticles act as electronic contacts to the molecules. By varying parameters such as the nanoparticle material, the matrix material, the nanoparticle size, and the interparticle distance, the electronic behavior of the nanoparticle arrays can be substantially tuned and controlled. Furthermore, via the excitation of surface plasmon polaritons, the nanoparticles can be optically excited and electronically read-out. The versatility and possible applications of well-ordered nanoparticle arrays has been demonstrated by the realization of switching devices triggered optically or chemically and by the demonstration of chemical and mechanical sensing. Interestingly, hexagonal nanoparticle arrays may also become a useful platform to study the physics of collective plasmon resonances that can be described as Dirac-like bosonic excitations.

The influence of molecular mobility on the properties of networks of gold nanoparticles and organic ligands.

We prepare and investigate two-dimensional (2D) single-layer arrays and multilayered networks of gold nanoparticles derivatized with conjugated hetero-aromatic molecules, i.e., S-(4-{[2,6-bipyrazol-1-yl)pyrid-4-yl]ethynyl}phenyl)thiolate (herein S-BPP), as capping ligands. These structures are fabricated by a combination of self-assembly and microcontact printing techniques, and are characterized by electron microscopy, UV-visible spectroscopy and Raman spectroscopy. Selective binding of the S-BPP molecules to the gold nanoparticles through Au-S bonds is found, with no evidence for the formation of N-Au bonds between the pyridine or pyrazole groups of BPP and the gold surface. Subtle, but significant shifts with temperature of specific Raman S-BPP modes are also observed. We attribute these to dynamic changes in the orientation and/or increased mobility of the molecules on the gold nanoparticle facets. As for their conductance, the temperature-dependence for S-BPP networks differs significantly from standard alkanethiol-capped networks, especially above 220 K. Relating the latter two observations, we propose that dynamic changes in the molecular layers effectively lower the molecular tunnel barrier for BPP-based arrays at higher temperatures.